منابع مشابه
Hafnium germanium telluride
The title hafnium germanium telluride, HfGeTe(4), has been synthesized by the use of a halide flux and structurally characterized by X-ray diffraction. HfGeTe(4) is isostructural with stoichiometric ZrGeTe(4) and the Hf site in this compound is also fully occupied. The crystal structure of HfGeTe(4) adopts a two-dimensional layered structure, each layer being composed of two unique one-dimensio...
متن کاملZr Stabilized Ti5Te4-Type Hafnium Telluride
Hafnium and zirconium are commonly thought to be very similar in chemistry. However, they are surprisingly dissimilar in the chemistry of metal-rich chalcogenides. For instance, Hf2S [1] and Hf2Se [2] are comprised of hexagonal closepacked double metal atom layers spaced by sulfur or selenium while both Zr2S [3] and Zr2Se [4] crystallize in a Ta2P-type structure [5]. Zr2Te [6] and Hf2Te [7] ado...
متن کاملGermanium telluride nanowires and nanohelices with memory-switching behavior.
We report the synthesis of single-crystalline GeTe nanowires (NWs) and nanohelices (NHs) using a vapor transport method assisted by metal catalysts. The NWs have typical diameters of 65 +/- 20 nm and lengths reaching up to 50 mum, while NHs have an average helix diameter of 135 +/- 30 nm, with widely varying pitches. Electron microscopy and diffraction measurements show that these NWs and NHs a...
متن کاملSynthesis and size-dependent crystallization of colloidal germanium telluride nanoparticles†‡
Colloidal nanocrystals have long been used to study the dependence of phase stability and transitions on size. Both structural phase stability and phase transitions change dramatically in the nanometre size regime where the surface plays a significant role in determining the overall energetics of the system. We investigate the solid–solid phase transformation of crystallization in amorphous GeT...
متن کاملLow-bias electron transport properties of germanium telluride ultrathin films
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ژورنال
عنوان ژورنال: Acta Crystallographica Section E Structure Reports Online
سال: 2008
ISSN: 1600-5368
DOI: 10.1107/s1600536808011380